Infineon Technologies AG has introduced the RIC70115, a radiation-hardened (rad hard) GaN HEMT driver designed for satellite and high-reliability space applications where power conversion performance ...

Infineon has brought out a rad-hard GaN HEMT)m driver designed for satellite and high-reliability space applications. The chip, designated RIC70115, supports both silicon (Si) and GaN MOSFET designs ...

The RIC70115 is a radiation-hardened GaN driver Credit: Infineon Infineon Technologies has introduced the RIC70115, a radiation-hardened gallium nitride (GaN) high-electron mobility transistor (HEMT) ...

Munich, Germany – 15 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor ...